The Etch Rate Calculator helps determine the speed at which material is removed from a surface during an etching process. Etching is a critical step in semiconductor fabrication, microelectromechanical systems (MEMS), and nanotechnology, where precise material removal is required to define patterns, layers, or features on a substrate.
By calculating the etch rate, engineers and researchers can evaluate process efficiency, compare etch recipes, control layer thickness, and ensure consistency across fabrication runs. This calculator simplifies complex measurements into a straightforward ratio, offering real-time support for both wet and dry etching environments.
formula of Etch Rate Calculator
Etch Rate = Etch Depth / Etch Time
Where:
- Etch Rate is the speed of material removal, typically expressed in nanometers per minute (nm/min), micrometers per minute (µm/min), or angstroms per second (Å/s)
- Etch Depth is the total thickness of material removed during the process (nm, µm, or Å)
- Etch Time is the duration of the etching step (in seconds or minutes)
For multi-step processes or layered materials:
Etch Rateᵢ = Depthᵢ / Timeᵢ
Each layer or etching condition may have its own distinct rate due to variations in material properties, chemistry, or plasma behavior.
Helpful Reference Table
The table below shows estimated etch rates for different process scenarios. These values are approximations and may vary depending on the etching environment and material.
| Etch Depth | Etch Time | Resulting Etch Rate |
|---|---|---|
| 500 nm | 5 minutes | 100 nm/min |
| 2 µm | 4 minutes | 500 nm/min |
| 300 Å | 30 seconds | 10 Å/s |
| 1 µm | 2 minutes | 0.5 µm/min |
| 750 nm | 5 minutes | 150 nm/min |
This table allows users to benchmark or estimate process parameters quickly without manual calculation.
Example of Etch Rate Calculator
Let’s say a silicon wafer is etch to a depth of 2 micrometers (µm) in a duration of 4 minutes.
Step 1: Use the standard formula
Etch Rate = Etch Depth / Etch Time
Etch Rate = 2 µm / 4 min = 0.5 µm/min
Result: The etch rate is 0.5 µm per minute, meaning half a micrometer of material is removed every minute under current process conditions.
This result can help optimize etching time for future steps or verify that the process matches design requirements.
Most Common FAQs
Etch rate is influence by the etching method (e.g., reactive ion, wet chemical), material type, etchant chemistry, temperature, pressure, and process uniformity. Changes in any of these can alter the rate significantly.
Knowing the etch rate helps ensure that layers are not under-etch or over-etch, which can impact device performance, reliability, and yield in semiconductor or MEMS fabrication.
Yes. In plasma etching, chamber conditions, gas depletion, or equipment wear can reduce consistency. Regular calibration and monitoring using etch rate calculations are essential for maintaining process control.